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| AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 30 W, which makes it ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Ri JC Value 2.0 Unit C/W Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS -0.5, 15 Drain Current Continuous ID Total Dissipation at TC = 25 C PD 87.5 Derate Above 25 C -- 0.5 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG -65, 150 Unit Vdc Vdc Adc W W/C C C Figure 1. Available (flanged) Packages Features Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W) -- Error vector magnitude (EVM): 1.6% -- Power www..com gain: 15 dB -- Drain efficiency: 30% -- Modulation spectrum: @ 400 kHz = -64 dBc. @ 600 kHz = -71 dBc. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: -- P1dB: 33 W typical (typ). -- Power gain: @ P1dB = 14 dB. -- Efficiency: @ P1dB = 51% typ. -- Return loss: -12 dB. High-reliability, gold-metallization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 30 W minimum output power. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1.840 GHz, 30 W CW output power. Large signal impedance parameters available. * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR18030EF HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) = 38 A) Drain-source Breakdown Voltage (VGS = 0 V, ID = 150A V(BR)DSS IGSS IDSS GFS 65 -- -- -- -- -- -- 2.4 1 50 3 -- Adc Adc S Vdc Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.4 A) Gate Quiescent Voltage (VDS = 26 V, ID = 300 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.4 A) Table 5. RF Characteristics Parameter Drain-to-gate Capacitance (VDS = 26 V, VGS = 0 V, f = 1 MHz) Power Gain (VDS = 26 V, POUT = 15 W, IDQ = 300 mA) Gate Threshold Voltage (VDS = 10 V, ID = 100 A) VGS(TH) VDS(ON) VGS(Q) 2.8 3.0 -- 3.4 3.8 4.0 4.6 -- -- Vdc Vdc Vdc 0.30 Symbol Dynamic Characteristics CRSS Min -- Typ 0.8 Max -- Unit pF Functional Tests* (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) GL -- -- 15 30 -- -- dB % Drain Efficiency (VDS = 26 V, POUT = 15 W, IDQ = 300 mA) www..com (POUT = 10 EDGE Linearity Characterization W, f = 1.840 GHz, VDS = 26 V, IDQ = 300 mA) Modulation spectrum @ 400 kHz Modulation spectrum @ 600 kHz -- P1dB IRL -- -- Input Return Loss Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 300 mA) -- -64 33 -71 -- -- -- -- dBc W dBc Ruggedness (VDS = 26 V, POUT = 30 W, IDQ = 300 mA, VSWR = 10:1 [all angles]) * Across full DCS band, 1.805 GHz--1.880 GHz. No degradation in output power. -12 dB . AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Test Circuit Illustrations for AGR18030EF FB1 VGG C4 C3 Z1 RF INPUT C1 R1 Z14 C6 C7 C8 C9 C10 VDD Z13 Z2 C2 Z3 Z4 Z5 Z6 Z7 2 1 3 Z8 DUT C11 Z9 Z10 Z11 C5 Z12 RF OUTPUT PINS: 1. DRAIN, 2. SOURCE, 3. GATE A. Schematic www..com Parts List: Microstrip line: Z1 0.510 in. x 0.066 in.; Z2 0.364 in. x 0.066 in.; Z3 0.151 in. x 0.066 in.; Z4 0.151 in. x 0.155 in.; Z5 0.085 in. x 0.066 in.; Z6 0.245 in. x 0.540 in.; Z7 0.182 in. x 0.644 in.; Z8 0.052 in. x 0.390 in.; Z9 0.309 in. x 0.539 in.; Z10 0.102 in. x 0.539 in. to 0.125 in. taper; Z11 0.454 in. x 0.125 in.; Z12 0.769 in. x 0.066 in.; Z13 0.050 in. x 0.560 in.; Z14 0.050 in. x 0.560 in. ATC (R) chip capacitors: C1, C9: 8.2 pF, 100B8R2JW500X; C2, C6: 6.8 pF, 100B6R8JW500X. Vitramon (R) chip capacitors: C3, C7: 22,000 pF. Sprague (R) tantalum surface-mount chip capacitors: C4, C10: 22 F, 35 V. Murata (R) chip capacitor: C8: 0.01 F, GRM40X7R103K100AL. Kemet(R) 1206 chip capacitor: C9: 0.1 F, C1206104K5RAC7800. Johanson-GigaTrim (R) capacitor: C11: 0.4 pF--2.5 pF, 27281SL. Fair-Rite (R) ferrite bead: FB1: 2743019447. Resistor: R1: 12 . Taconic(R) ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. B. Component Layout Figure 2. AGR18030EF Test Circuit AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics U CT WA R D 0.48 IN D GTH S TO 90 170 0.0 - > WA VELE N 0.49 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 180 0.0 D <- 0.2 LOA OW A RD HST N GT -170 EL E 0.49 0.1 -90 0.4 0.48 ) / Yo (-jB CE 0.6 -160 -85 AN PT CE US ES 1. 0 WA 7 0.4 -80 4 0.0 0 -15 IV CT 0.4 IN DU 0.3 6 -75 R ,O o) 5 0.0 .45 -70 06 0. -65 0.6 -60 1.6 0.7 1.4 0.8 0.9 1.0 1.2 -5 5 -5 0 5 -4 GHz (f) 1.805 (f1) 1.843 (f2) 1.880 (f3) www..com ZS ZL (Complex Source Impedance) (Complex Optimum Load Impedance) 1.67 - j6.77 5.57 - j8.18 1.64 - j6.41 5.19 - j7.83 1.58 - j6.15 4.86 - j7.58 GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances 0.35 0.36 0.37 0.13 0.12 0.38 0.39 0.4 Z0 = 4 0. 32 0. 1.8 18 0 -5 -25 44 5 0. 0. 0.3 2. 0.1 3 0 7 -30 -60 0.3 0.1 4 6 -3 -70 5 0.15 0.14 -80 -4 0 0.4 0.2 -90 0.11 -100 CA P AC I TI 0.1 -110 VE RE AC TA N 0.0 0 9 .41 -12 CE CO M 0 0.0 PO N 0.4 8 2 EN T (-j -1 0. 40 0 4 Z X/ f3 ZS f1 -15 4.0 f3 <- 5.0 0.2 V f1 -10 0. 8 ZL 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 20 10 -20 3. 0 1. 0 0.8 0. 8 0.6 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES L E OF ANG 0.6 0.4 10 0.1 -1 20 0.2 -30 0.2 0.3 -4 0 50 -20 0.2 2 0.2 8 0.2 9 0.2 1 0. 19 0. 31 0. 07 30 0. 43 AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 60 60 50 50 DRAIN EFFICIENCY (%) 40 POUT (W) POUT 40 30 30 20 20 10 10 0 0.0 0.5 1.0 1.5 PIN (W) 2.0 2.5 3.0 3.5 0 TEST CONDITIONS: VDD = 26 V, IDQ = 300 mA, f = 1842.5 MHz, CW MEASUREMENT. Figure 4. Output Power and Efficiency vs. Input Power 17 16 www..com 15 14 IDQ = 400 mA IDQ = 350 mA IDQ = 300 mA IDQ = 250 mA IDQ = 200 mA GPS (dB)Z 13 12 11 10 9 8 0.0 0.1 1.0 POUT (W)Z 10.0 100.0 1000.0 TEST CONDITIONS: VDD = 26 V, f = 1842.5 MHz, CW MEASUREMENT. Figure 5. CW Power Gain vs. Output Power AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 16.0 15.5 15.0 14.5 GPS (dB)Z IRL (dB)Z 14.0 13.5 13.0 12.5 12.0 11.5 11.0 1750 -25 1950 IRL -20 -15 -10 GPS -5 0 1770 1790 1810 1830 1850 1870 1890 1910 1930 FREQUENCY (MHz)Z TEST CONDITIONS: VDD = 26 V, IDQ = 300 mA, PIN = 25 dBm, CW MEASUREMENT. Figure 6. Wideband Gain and Return Loss 16.0 15.5 www..com IDQ = 400 mA IDQ = 350 mA IDQ = 300 mA IDQ = 250 mA 15.0 14.5 GPS (dB)Z 14.0 13.5 13.0 12.5 12.0 IDQ = 200 mA 0.1 1.0 POUT (W) (PEP)Z 10.0 100.0 TEST CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 7. Two Tone Power Gain vs. Output Power AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) -20.0 -25.0 -30.0 -35.0 IMD3 (dBc)Z -40.0 -45.0 -50.0 -55.0 -60.0 -65.0 IDQ = 300 mA IDQ = 350 mA IDQ = 400 mA 10.0 POUT (W) (PEP)Z 100.0 IDQ = 250 mA IDQ = 200 mA 0.1 1.0 TEST CONDITIONS: VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 8. Intermodulation Distortion vs. Output Power 45 40 www..com -30 -35 SPECTRAL REGROWTH (dBc)Z -40 -45 -50 400 kHz GPS -55 -60 -65 600 kHz -70 -75 100.0 GPS (dB), DRAIN EFFICIENCY (%) 35 30 25 20 15 10 5 0 0.1 1.0 POUT (W) 10.0 TEST CONDITIONS: VDD = 26 V, IDQ = 300 mA, fc = 1842.5 MHz, EDGE MODULATION. Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 50 45 GPS (dB), DRAIN EFFICIENCY (%)Z 40 35 30 25 20 15 10 5 0 EVM GPS 10 9 8 7 6 5 4 3 2 1 0 100.0 EVM (% RMS)Z 0.1 1.0 POUT (W)Z 10.0 TEST CONDITIONS: VDD = 26 V, IDQ = 300 mA, fc = 1842.5 MHz, EDGE MODULATION. Figure 10. Power Gain, Efficiency, and EVM vs. Output Power www..com AGR18030EF 30 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are 0.005 in. unless specified. AGR18030EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 AR G 21045F Y W LL YW XXXX ZZZZZZZ PEAK DEVICES AEE GR AGR18030EF 3 1 3 2 2 XXXX - 4 Digit Trace Code www..com |
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